壓痕測(cè)試法的新發(fā)展

K.赫爾曼[1] 王蘭州[2]（翻譯/整理）
[1]德國聯(lián)邦物理技術(shù)研究院,德國 布倫瑞克市 [2]不詳
摘　要:介紹了壓痕測(cè)試法的最新發(fā)展,指出了確定超薄薄膜t＜10 nm及很硬的薄膜t＜100 nm的硬度及模量是對(duì)計(jì)量學(xué)中納米范圍的挑戰(zhàn).以壓痕測(cè)試法替代顯微維氏實(shí)驗(yàn)可顯著地降低測(cè)量不確定度及實(shí)現(xiàn)自動(dòng)化.壓痕測(cè)試法在納米范圍及顯微范圍內(nèi)可為微電子學(xué)、微電機(jī)械系統(tǒng)、技術(shù)光學(xué)等領(lǐng)域采用.[著者文摘]

New developments of the instrumented indentation testK. Herrmann Physikaliseh-Teehnisehe Bundesanstalt Braunscheig, GermanyAbstract:An advance of the instrumented indentation test （IIT） in recent years has been introduced in this work. It indicates a metrological challenge in the nano range-determination of hardness and modulus on ultrathin layers t〈10 nm and of very hard layers t~100 nm. Substitution of micro Vickers test by IIT enables signifi- cant reduction of measurement uncertainty and automatization. IIT in nano and micro ranges provides manifold applications for microelectronics, MEMS, technical optics, etc.[著者文摘]

Key words:indentation, the instrumented indentation test （IIT） ; uncertainty; metrology