ESD與EMP對微波晶體管損傷機理研究

劉紅兵[1] 王長河[1] 趙彤[1] 李用兵[1] 楊潔[2]
[1]中國電子科技集團公司第十三研究所,石家莊050051
[2]中國人民解放軍軍械工程學院,石家莊050003

摘　要:主要論述了電子裝備中易受靜電放電（ESD）和電磁脈沖（EMP）損傷的微波半導體器件的失效模式和失效機理。實驗與理論分析結(jié)果表明,電流放大系數(shù)hFE是ESD、EMP損傷的敏感參數(shù);在ESD、EMP的作用下,器件進入雪崩擊穿狀態(tài)（反偏注入）,從而誘發(fā)熱電子注入效應(yīng),使hFE逐漸退化;BC結(jié)反偏時的失效能量低于EB結(jié)反偏時的失效能量,BC結(jié)是EMP損傷的較易損端口;改進器件的結(jié)構(gòu)設(shè)計、提高器件抗ESD、EMP能量,可有效提高電子裝備抗電磁脈沖的可靠性水平。[著者文摘]

Study on the Effect of ESD and EMP Radiation Damage on Microwave Semiconductor DevicesLiu Hongbing, Wang Changhe, Zhao Tong, Li Yongbing, Yang Jie 1. The 13^th Researek Institute, CETC , Shijiazhuang 050051, China ; 2. Ordnance Engineering Collage of PLA, Shijiazhnang 050003, ChinaAbstract:Damages caused by ESD or EMP on microwave semiconductor devices were discussed, and their main failure model and mechanisms were analyzed. The experimental and analysis results show that current amplification factor hFE is a more sensitive parameter of ESD or EMP; effeeted by ESD or EMP, the device will break into avalanche breakdown, which sequentially incite the injection effect of hot electron and finally result in degeneration of hFE; it is proved that BC junction is easier to be damaged than EB junction by ESD or EMP in experiments, because the failure energy of BC junction is less than that of EB while in state of reverse-bias; the ability of anti-EMP can be improved through reforming the design of electronic device which may increase the failune energy of ESD and EMP.[著者文摘]

Key words:ESD; EMP; radiation damage