標題: ASTM F 996-1998 利用次臨界伏安特性測定由于氧化空穴和界... [打印本頁] 作者: 兌水 時間: 2009-11-28 07:32 標題: ASTM F 996-1998 利用次臨界伏安特性測定由于氧化空穴和界... F996-98(2003) Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics